2SK303 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – Low-Frequency General-Purpose Amp Applications

SMD Type
Junction FET
N-Channel Junction Silicon FET
2SK303
Features
Ideal for potentiometers, analog switches, low
frequency amplifiers, constant current supplies, and
impedance conversion.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to Drain voltage
Gate current
Drain current
Power dissipation
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
VDSS
VGDS
IG
ID
PD
Tch
Tstg
Rating
30
-30
10
20
200
150
-55 to +150
Unit
V
V
mA
mA
mW
1Source
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Electrical Characteristics Ta = 25
Parameter
Gate to drain
Gate to source leakage current
Drain cut-off current
Cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Reverse transfer capacitance
Symbol
VGDS
IGSS
IDSS
VGS(off)
Yfs
RDS(on)
Ciss
Crss
Testconditons
IG=-10 A
VGS=-20V
VDS=10V,VGS=0
VDS=10V,ID=1 A
VDS=10V,VGS=0,f=1MHz
VGS=0,VDS=10mV
VDS=10V,VGS=0,f=1MHZ
Min Typ Max Unit
-30
V
-1.0 nA
0.6
12.0 mA
-1 -4 V
2.5 6.0
ms
250
5
pF
1.5
pF
IDSS Classification unit:mA
Marking
Rank
IDSS
V2
2
0.6 1.5
V3
3
1.2 3.0
V4
4
2.5 6.0
V5
5
5.0 12.0
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