2SK3024-Z Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
2SK3024-Z
MOSFET
TO-252
Unit: mm
■ Features
● VDS (V) = 60V
● ID = 20 A (VGS = 10V)
● RDS(ON) ＜ 50mΩ (VGS = 10V)
● RDS(ON) ＜ 70mΩ (VGS = 4V)
D
● Switching power supply
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta = 25℃
Tc = 25℃
Avalanche Energy Capacity
(Note.1)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Note.1: L = 0.1mH, IL = 20A, 1 pulse
■ Electrical Characteristics Ta = 25℃
Symbol
VDS
VGS
ID
IDM
PD
EAS
RthJA
RthJC
TJ
Tstg
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Gate
2 Drain
3 Source
Rating
60
±20
20
40
20
1
20
125
6.25
150
-55 to 150
Unit
V
A
W
mJ
℃/W
℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Diode Forward Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Test Conditions
ID=1 mA, V GS=0V
VDS=50V, VGS=0V
VDS=0V, VGS=±20V
VDS=10V, ID=1mA
VGS=10V, ID=10A
VGS=4V, ID=10A
VDS=10V, ID=10A
VGS=0V, VDS=10V, f=1MHz
VDD = 30V, ID = 10A
VGS = 10V, RL = 3Ω
IS=20A,VGS=0V
Min Typ Max Unit
60
V
10 uA
±10 uA
1
2.5 V
50
mΩ
70
8 12
S
330
290
pF
70
20
125
ns
520
1480
1.5 V
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