2SK3018_15 Datasheet, PDF (1/3 Pages) Guilin Strong Micro-Electronics Co., Ltd. – SOT-23 Field Effect Transistors

SMD Type
MOSFET
■ Features
● VDS (V) = 30V
● ID = 0.1 A
● RDS(ON) ＜ 8Ω (VGS = 4V)
● RDS(ON) ＜ 13Ω (VGS = 2.5V)
N-Channel MOSFET
2SK3018
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
Drain
Gate
Gate
Protection
Diode
Source
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note.1)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ
Tstg
Rating
30
±20
100
400
200
150
-55 to 150
Note.1: PW ≤ 10us, Duty Cycle ≤ 1%
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Conditions
ID=250μA, VGS=0V
VDS=30V, VGS=0V
VDS=0V, VGS=±20V
VDS=3V , ID=0.1mA
VGS=4V, ID=10mA
VGS=2.5V, ID=1mA
VDS=3V, ID=10mA
VGS=0V, VDS=5V, f=1MHz
VGS=5V, VDS=5V,
ID=10mA,RL=500Ω,RG=10Ω
■ Marking
Marking
KN
Unit
V
mA
mW
℃
Min Typ Max Unit
30
V
1 uA
±1 uA
0.8
1.5 V
8
Ω
13
20
mS
13
9
pF
4
15
35
ns
80
80
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