2SK2992 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE(HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER,AND MOTOR DRIVE APPLICATIONS)

SMD Type
N-Channel MOSFET
2SK2992
MOSFET
■ Features
● VDS (V) = 200V
● ID = 1 A (VGS = 10V)
● RDS(ON) ＜ 3.5Ω (VGS = 10V)
● High Forward Transfer Amdittance
● Low Leakage Current
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate
2.Drain
3.Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Drain-Gate Voltage (RGS=20KΩ)
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Power Dissipation
Repetitive Avalanche Energy
Single Pulse Avalanche Energy (Note.1)
Thermal Resistance.Junction- to-Ambient
Junction Temperature
Storage Temperature Range
Symbol
VDS
VDG
VGS
ID
IDM
IAR
PD
EAR
EAS
RthJA
TJ
Tstg
Rating
200
200
±20
1
3
1
1.5
0.15
36
250
150
-55 to 150
Note.1:VDD = 50 V, TJ = 25°C (initial), L = 56.7 mH, RG = 25 Ω, IAR = 1 A
Unit
V
A
W
mJ
℃/W
℃
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