2SK2887 Datasheet, PDF (1/1 Pages) Rohm – Switching (200V, 3A)

SMD Type
N-Channel Silicon MOSFET
2SK2887
MOSFICET
Features
Low on-resistance.
Fast switching speed.
Wide SOA (safe operating area).
Gate-source voltage (VGSS) guaranteed to be 30V.
Easily designed drive circuits.
Easy to parallel.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VDSS
200
V
VGSS
30
V
ID
3
A
Idp *
12
A
PD
20
W
Tch
150
Tstg
-55 to +150
1 Gate
2 Drain
3 Source
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Reverse recovery charge
Symbol
VDSS
IDSS
IGSS
VGS(th)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
trr
Qrr
Testconditons
ID=1mA,VGS=0
VDS=200V,VGS=0
VGS= 30V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=1.5A
VGS=10V,ID=1.5A
VDS=10V,VGS=0,f=1MHZ
ID=1.5A,VGS(on)=10V,RL=68 ,RG=10
,VDD=100V
IDR=3A,VGS=0V,di/dt=100A/ s
Min Typ Max Unit
200
V
100
A
100 nA
2.0
4.0 V
0.6 1.5
S
0.7 0.9
230
pF
100
pF
35
pF
10
ns
12
ns
26
ns
34
ns
96
ns
0.56
c
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