2SK2857 Datasheet, PDF (1/1 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

SMD Type
MOS Field Effect Transistor
2SK2857
Features
Can be driven by a 5V power source.
Low On-state resistance :
RDS(on)1 = 220 m MAX. (VGS = 4 V, ID = 1.5 A)
RDS(on)2 = 150 m MAX. (VGS = 10 V, ID = 2.5 A)
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
12 ³
0.48+0.1
-0.1
0.53+0.1
-0.1
MOSFET
Unit: mm
1.50^+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Rating
Unit
VDSS
60
V
VGSS
20
V
ID
4
A
Idp *
16
A
PD
2
W
Tch
150
Tstg
-55 to +150
Symbol
Testconditons
IDSS VDS=60V,VGS=0
IGSS VGS= 20V,VDS=0
VGS(off) VDS=10V,ID=1mA
Yfs VDS=10V,ID=2A
VGS=4V,ID=1.5A
RDS(on)
VGS=10V,ID=2.5A
Ciss
Coss VDS=10V,VGS=0,f=1MHZ
Crss
ton
tr
ID=1A,VGS(on)=10V,RL=25 ,RG=10
toff
,VDD=25V
tf
1 Gate
1¹.^. S^Bo^au^serce
2 Drain
2².^. D^Cr^oa^lli^en^ctor
3³³.^. G^SEma^ot^uie^itrtcere
Min Typ Max Unit
10
A
10
A
1.0 11.4 2.0 V
1
S
150 220 m
110 150 m
265
pF
125
pF
56
pF
8
ns
11
ns
52
ns
22
ns
Marking
Marking
NX
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