2SK1828_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
2SK1828
■ Features
● VDS (V) = 20V
● ID = 50mA
● RDS(ON) ＜ 40Ω (VGS = 2.5V)
● Low threshold voltage: Vth = 0.5~1.5 V
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
MOSFET
Unit: mm
0.1 +0.05
-0.01
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
20
V
VGS
±10
Continuous Drain Current
ID
50
mA
Power Dissipation
PD
200
mW
Junction Temperature
Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate threshold voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-Off DelayTime
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
td(off)
Test Conditions
ID=250μA, VGS=0V
VDS=20V, VGS=0V
VDS=0V, VGS=±10V
VDS=3V ID=100uA
VGS=2.5V, ID=10mA
VDS=3V, ID=10mA
VGS=0V, VDS=3V, f=1MHz
VGS=0~2.5V, VDS=3V, ID=10mA
Min Typ Max Unit
20
V
1 uA
±1 uA
0.5
1.5 V
40 Ω
20
ms
5.5
6.5
pF
1.6
140
ns
140
■ Marking
Marking
KI
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