2SK1828 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICASTIONS)

SMD Type
MOSFET
MOS Field Effect Transistor
2SK1828
Features
2.5V Gate Drive
Low Threshold Voltage :Vth=0.5 to 1.5V
High Speed
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
* PW 10ms, duty cycle 5%
Symbol
VDSS
VGSS
ID
PD
Tch
Tstg
Rating
20
10
50
200
150
-55 to +150
Unit
V
V
mA
mW
1.B₁a_Gse_ATE
2.₂Em_Si_Otte_Ur_RCE
3.3coDlleRctAorIN
Electrical Characteristics Ta = 25
Parameter
Drain source breakdown voltage
Drain cut-off current
Gate leakage current
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time turn on time
Switching time turn off time
Symbol
Testconditons
VDSS ID=100 A,VGS=0
IDSS VDS=20V,VGS=0
IGSS VGS=10V,VDS=0
Yfs VDS=3.0V,ID=10mA
RDS(on) VGS=2.5V,ID=10mA
Ciss
Coss VDS=3.0V,VGS=0,f=1MHZ
Crss
ton
ID=10mA,VGS(on)=0 to 2.5V,VDD=3.0V
toff
Min Typ Max Unit
20
V
1.0
A
1
A
20
ms
25 40
5.5
pF
1.6
pF
6.5
pF
0.14
s
0.14
s
Marking
Marking
KI
www.kexin.com.cn ¹