2SK1657-3 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
MOSFET
■ Features
● VDS (V) = 30V
● ID = 0.1A
● RDS(ON) ＜ 45Ω (VGS = 2.5V)
● RDS(ON) ＜ 25Ω (VGS = 4V)
N-Channel MOSFET
2SK1657
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 ^+0.02
-0.02
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
V
VGS
±7
Continuous Drain Current
Pulsed Drain Current
(Note.1)
ID
100
mA
IDM
200
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
Operating Temperature
Topt
-55 to 80
℃
Storage Temperature Range
Tstg
-55 to 150
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Cut-off Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
Test Conditions
VDSS ID=250μA, VGS=0V
IDSS VDS=30V, VGS=0V
IGSS VDS=0V, VGS=±3V
VGS(off) VDS=3V ID=1uA
RDS(On)
VGS=2.5V, ID=10mA
VGS=4V, ID=10mA
gFS
VDS=3V, ID=10mA
Ciss
Coss VGS=0V, VDS=3V, f=1MHz
Crss
td(on)
tr
td(off)
VGS(on)=3V, VDS=3V, ID=10mA,
RL=300Ω,RG=10Ω
tf
Min Typ Max Unit
30
V
10 uA
±5 uA
0.9
1.5 V
45
Ω
25
20 40
ms
15
10
pF
1.5
95
360
ns
160
150
■ Marking
Marking
G19
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