2SK1593_15 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
2SK1593
MOSFET
■ Features
● VDS (V) = 100V
● ID = 0.5A
● RDS(ON) ＜ 6Ω (VGS = 4V)
● RDS(ON) ＜ 5Ω (VGS = 10V)
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate
2.Drain
3.Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
100
V
VGS
±20
Continuous Drain Current
Pulsed Drain Current
(Note.1)
ID
0.5
A
IDM
1
Power Dissipation
PD
2
W
Junction Temperature
Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Cut-off Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
Test Conditions
Min
VDSS ID=250μA, VGS=0V
100
IDSS VDS=100V, VGS=0V
IGSS VDS=0V, VGS=±20V
VGS(off) VDS=10V ID=1mA
0.8
RDS(On)
VGS=4V, ID=0.3 A
VGS=10V, ID=0.3 A
gFS
VDS=10V, ID=0.5 A
0.4
Ciss
Coss VGS=0V, VDS=10V, f=1MHz
Crss
td(on)
tr
td(off)
VGS(on)=4V, VDS=10V, ID=0.3A,
RL=33Ω,RG=10Ω
tf
Typ Max Unit
V
10 uA
±10 uA
2
V
6
Ω
5
0.5
S
55
25
pF
4.5
60
140
ns
140
90
■ Marking
Marking
NP
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