2SK1590_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
■ Features
● VDS (V) = 60V
● ID = 0.2 A
● RDS(ON) ＜ 3Ω (VGS = 10V)
● RDS(ON) ＜ 6Ω (VGS = 4V)
N-Channel MOSFET
2SK1590
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
MOSFET
Unit: mm
0.1 +0.05
-0.01
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note.1)
Power Dissipation
Junction Temperature
Storage Temperature Range
Note.1: PW ≤ 10ms, Duty Cycle ≤ 50%
■ Electrical Characteristics Ta = 25℃
Symbol
VDS
VGS
ID
IDM
PD
TJ
Tstg
Rating
60
±20
0.2
0.4
200
150
-55 to 150
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Cutt-off Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
VDSS
IDSS
IGSS
VGS(off)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Conditions
ID=250μA, VGS=0V
VDS=60V, VGS=0V
VDS=0V, VGS=±20V
VDS=5V , ID=1uA
VGS=10V, ID=10mA
VGS=4V, ID=10mA
VDS=5V, ID=10mA
VGS=0V, VDS=5V, f=1MHz
VGS(on)=5V, VDS=5V,
ID=10mA,RL=500Ω,RG=10Ω
■ Marking
Marking
G16
Unit
V
A
mW
℃
Min Typ Max Unit
60
V
1 uA
±10 uA
0.8
1.8 V
3
Ω
6
20 65
mS
26
20
pF
4
50
140
ns
200
190
www.kexin.com.cn ¹