2SK1589_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
MOSFET
N-Channel MOSFET
2SK1589
■ Features
● VDS (V) = 100V
● ID = 0.1 A
● RDS(ON) ＜ 30Ω (VGS = 4V)
● RDS(ON) ＜ 25Ω (VGS = 10V)
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note.1)
Power Dissipation
Junction Temperature
Storage Temperature Range
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
Symbol
Rating
Unit
VDS
100
V
VGS
±20
ID
100
mA
IDM
200
PD
200
mW
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Cut-off Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
Test Conditions
VDSS ID=250μA, VGS=0V
IDSS VDS=100V, VGS=0V
IGSS VDS=0V, VGS=±20V
VGS(off) VDS=5 V ID=1uA
RDS(On)
VGS=4V, ID=10m A
VGS=10V, ID=10m A
gFS
VDS=5V, ID=10m A
Ciss
Coss VGS=0V, VDS=5V, f=1MHz
Crss
td(on)
tr
td(off)
VGS(on)=5V, VDS=5V, ID=10mA,
RL=500Ω,RG=10Ω
tf
Min Typ Max Unit
100
V
1 uA
±1 uA
0.8
1.8 V
30
Ω
25
20 38
mS
16
12
pF
3
17
10
ns
68
38
■ Marking
Marking
G17
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