2SK1585 Datasheet, PDF (1/1 Pages) NEC – N-CHANNEL MOS FET FOR SWITCHING

SMD Type
MOS Field Effect Transistor
2SK1585
Features
Directly driven by Ics having a 3V power supply.
Has low on-state resistance
RDS(on)=1.2 MAX.@VGS=2.5V,ID=0.5A
RDS(on)=1.0 MAX.@VGS=4.0V,ID=0.5A
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
12 ³
0.48+0.1
-0.1
0.53+0.1
-0.1
MOSFET
Unit: mm
1.50^+0.1
-0.1
0.44+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW 10ms, duty cycle 5%
Symbol
VDSS
VGSS
ID
ID
PD
Tch
Tstg
Rating
16
16
1.0
2.0
2.0
150
-55 to +150
3.00+0.1
-0.1
Unit
V
V
A
A
W
1 Gate
1¹.^. S^Bo^au^serce
2 Drain
2².^. D^Cr^oa^lli^en^ctor
3³³.^. G^SEma^ot^uie^itrtcere
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Testconditons
IDSS VDS=16V,VGS=0
IGSS VGS= 16V,VDS=0
VGS(off) VDS=5V,ID=1mA
Yfs VDS=5.0V,ID=0.5A
VGS=2.5V,ID=0.5A
RDS(on)
VGS=4.0V,ID=0.5A
Ciss
Coss VDS=3.0V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
ID=0.5A,VGS(on)=3V,RL=6
,VDD=10V,RG=10
tf
Min Typ Max Unit
10
A
10 A
0.8 1.2 1.6 V
0.4 1.0
s
0.6 1.2
0.3 1.0
116
pF
107
pF
27
pF
80
ns
260
ns
145
ns
110
ns
Marking
Marking
NE
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