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2SK1583-HF Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET | |||
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SMD Type
N-Channel MOSFET
2SK1583-HF
MOSFET
â Features
â VDS (V) = 16V
â ID = 0.5 A
â RDS(ON) ï¼ 1.5Ω (VGS = 4V)
â RDS(ON) ï¼ 2Ω (VGS = 2V)
â PbâFree Package May be Available. The GâSuffix Denotes a
PbâFree Lead Finish
1.70 0.1
0.42 0.1
0.46 0.1
â Absolute Maximum Ratings Ta = 25â
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note.1)
Power Dissipation
Junction Temperature
Storage Temperature Range
Note.1: PW ⤠10ms, Duty Cycle ⤠50%
Symbol
Rating
Unit
VDS
16
V
VGS
±16
ID
0.5
A
IDM
1
PD
2
W
TJ
150
â
Tstg
-55 to 150
â Electrical Characteristics Ta = 25â
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Cutt-off Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
VDSS
IDSS
IGSS
VGS(off)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Conditions
ID=250μA, VGS=0V
VDS=16V, VGS=0V
VDS=0V, VGS=±16V
VDS=5V , ID=1mA
VGS=4V, ID=0.3A
VGS=2.5V, ID=0.3A
VDS=5V, ID=0.3A
VGS=0V, VDS=5V, f=1MHz
VGS(on)=3V, VDS=10V,
ID=0.3A,RL=33Ω,RGEN=10Ω
â Marking
Marking
ND F
1.Gate
2.Drain
3.Source
Min Typ Max Unit
16
V
1 uA
±5 uA
0.8
1.6 V
1.5
Ω
2
400 550
mS
60
70
pF
15
95
360
ns
160
150
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