2SK1582-3 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
2SK1582
MOSFET
■ Features
● VDS (V) = 30V
● ID = 0.2 A
● RDS(ON) ＜ 5Ω (VGS = 4V)
● RDS(ON) ＜ 3Ω (VGS = 10V)
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 ^+0.02
-0.02
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note.1)
Power Dissipation
Ta = 25℃
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VDS
30
V
VGS
±20
ID
200
mA
IDM
400
PD
200
mW
TJ
150
℃
Tstg
-55 to 150
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Cut-off Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
VDSS
IDSS
IGSS
VGS(off)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Conditions
ID=250μA, VGS=0V
VDS=30V, VGS=0V
VDS=0V, VGS=±20V
VDS=5 V ID=1uA
VGS=4V, ID=10m A
VGS=10V, ID=10m A
VDS=5V, ID=10m A
VGS=0V, VDS=5V, f=1MHz
VGS(on)=5V, VDS=5V, ID=10mA,
RL=500Ω,RG=10Ω
Min Typ Max Unit
30
V
1 uA
±1 uA
0.8
1.8 V
5
Ω
3
20 60
mS
28
30
pF
7
55
200
ns
180
250
■ Marking
Marking
G15
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