2SK1581-3 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
2SK1581
MOSFET
■ Features
● VDS (V) = 16V
● ID = 0.2 A
● RDS(ON) ＜ 5Ω (VGS = 2.5V)
● RDS(ON) ＜ 3Ω (VGS = 4V)
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 ^+0.02
-0.02
■ Absolute Maximum Ratings Ta = 25℃
1. Gate
2. Source
3. Drain
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note.1)
Power Dissipation
Ta = 25℃
Junction Temperature
Operating Temperature
Storage Temperature Range
Symbol
Rating
Unit
VDS
16
V
VGS
±16
ID
200
mA
IDM
400
PD
200
mW
TJ
150
Topt
-55 to 80
℃
Tstg
-55 to 150
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Cut-off Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
Test Conditions
VDSS ID=250μA, VGS=0V
IDSS VDS=16V, VGS=0V
IGSS
VDS=0V, VGS=±3V
VGS(off) VDS=3 V ID=10uA
RDS(On)
VGS=2.5V, ID=1m A
VGS=4V, ID=1m A
gFS
VDS=3V, ID=10m A
Ciss
Coss VGS=0V, VDS=3V, f=1MHz
Crss
td(on)
tr
td(off)
VGS(on)=3V, VDS=3V, ID=10mA,
RL=300Ω,RG=10Ω
tf
Min Typ Max Unit
16
V
1 uA
±5 uA
0.8
1.6 V
5
Ω
3
20 70
mS
27
37
pF
8
100
300
ns
210
240
■ Marking
Marking
G14
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