2SK1483_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
2SK1483
MOSFET
■ Features
● VDS (V) = 30V
● ID = 2 A
● RDS(ON) ＜ 800mΩ (VGS = 4V)
● RDS(ON) ＜ 400mΩ (VGS = 10V)
● Complments the 2SJ197
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate
2.Drain
3.Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note.1)
Power Dissipation
Ta = 25℃
Junction Temperature
Storage Temperature Range
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
■ Electrical Characteristics Ta = 25℃
VDS
30
V
VGS
±20
ID
2
A
IDM
4
PD
2
W
TJ
150
℃
Tstg
-55 to 150
Parameter
Symbol
Test Conditions
Min
Drain-Source Breakdown Voltage
VDSS ID=250μA, VGS=0V
30
Zero Gate Voltage Drain Current
IDSS VDS=30V, VGS=0V
Gate-Body Leakage Current
IGSS VDS=0V, VGS=±20V
Gate Cut-off Voltage
VGS(off) VDS=10 V ID=1mA
1.3
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
RDS(On)
VGS=4V, ID=0.5 A
VGS=10V, ID=0.5 A
gFS
VDS=10V, ID=0.5 A
0.4
Ciss
Coss VGS=0V, VDS=10V, f=1MHz
Crss
td(on)
tr
td(off)
VGS(on)=10V, VDS=25V, ID=0.5A,
RL=50Ω,RG=10Ω
tf
Typ Max Unit
V
10 uA
±10 uA
2.5 V
0.8
Ω
0.4
S
230
170
pF
45
15
50
ns
420
240
■ Marking
Marking
NB
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