2SK1483 Datasheet, PDF (1/1 Pages) NEC – N-CHANNEL MOS FET FOR SWITCHING

SMD Type
MOSFET
MOS Field Effect Transistor
2SK1483
Features
Can be driven directly an IC operating with a 5V single power supply.
Low ON-state resistance
RDS(on)=0.8 MAX. At VGS=4V,ID=0.5A
RDS(on)=0.4 MAX. At VGS=10V,ID=0.5A
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
12 ³
0.48+0.1
-0.1
0.53+0.1
-0.1
Unit: mm
1.50^+0.1
-0.1
0.44+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW 10ms, duty cycle 5%
Symbol
VDSS
VGSS
ID
ID
PD
Tch
Tstg
Rating
30
20
2.0
4.0
2.0
150
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Testconditons
IDSS VDS=30V,VGS=0
IGSS VGS= 20V,VDS=0
VGS(off) VDS=10V,ID=1mA
Yfs VDS=10V,ID=0.5A
VGS=4.0V,ID=0.5A
RDS(on)
VGS=10V,ID=0.5A
Ciss
Coss VDS=10V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
ID=0.5A,VGS(on)=10V,RL=50
,VDD=25V,RG=10
tf
3.00+0.1
-0.1
Unit
V
V
A
A
W
1 Gate
1¹.^. S^Bo^au^serce
2 Drain
2².^. D^Cr^oa^lli^en^ctor
3³³.^. G^SEma^ot^uie^itrtcere
Min Typ Max Unit
10
A
5.0 A
0.9 1.2 1.5 V
20 38
ms
22 40
14 20
8
pF
7
pF
3
pF
15
ns
50
ns
420
ns
240
ns
Marking
Marking
NB
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