2SK1399-3 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
MOSFET
N-Channel MOSFET
2SK1399
Features
Can be driven by a 3.0-V power source
Not necessary to consider driving current because of it is high input
impedance
Possible to reduce the number of parts by omitting the bias resistor
● Complments the 2SJ185
Drain
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 ^+0.02
-0.02
Gate
Internal
Diode
Gate
Protection
Diode
■ Absolute Maximum Ratings Ta = 25℃
Source
1. Gate
2. Source
3. Drain
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note.1)
Power Dissipation
Ta = 25℃
Junction Temperature
Operating Temperature
Storage Temperature Range
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
Symbol
VDS
VGS
ID
IDM
PD
TJ
Topt
Tstg
Rating
50
±7
100
200
200
150
-55 to 80
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Cut-off Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
Test Conditions
VDSS ID=250μA, VGS=0V
IDSS VDS=50V, VGS=0V
IGSS VDS=0V, VGS=±7V
VGS(off) VDS=3 V ID=1uA
RDS(On)
VGS=2.5V, ID=10m A
VGS=4V, ID=10m A
gFS
VDS=3V, ID=10m A
Ciss
Coss VGS=0V, VDS=3V, f=1MHz
Crss
td(on)
tr
td(off)
VGS=3V, VDS=3V, ID=20mA,
RL=150Ω,RG=10Ω
tf
Unit
V
mA
mW
℃
Min Typ Max Unit
50
V
10 uA
±5 uA
0.9
1.5 V
40
Ω
20
20 38
ms
8
7
pF
3
15
100
ns
30
35
■ Marking
Marking
G12
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