2SK1273_15 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
N-Channel MOSFET
2SK1273
MOSFET
■ Features
● VDS (V) = 60V
● ID = 2 A
● RDS(ON) ＜ 1Ω (VGS = 4V)
● RDS(ON) ＜ 0.65Ω (VGS = 10V)
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate
2.Drain
3.Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note.1)
Power Dissipation
Junction Temperature
Channel Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ
Tch
Tstg
Rating
60
±20
2
4
2
150
150
-55 to 150
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VDSS
IDSS
ID=250μA, VGS=0V
VDS=60V, VGS=0V
Gate-Body Leakage Current
IGSS VDS=0V, VGS=±20V
Gate Cut-off Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS(off) VDS=10 V ID=1mA
RDS(On)
VGS=4V, ID=0.5 A
VGS=10V, ID=0.5 A
gFS
VDS=10V, ID=0.5 A
Ciss
Coss VGS=0V, VDS=10V, f=1MHz
Crss
td(on)
tr
td(off)
VGS=10V, VDS=25V, ID=0.5A,
RL=50Ω,RG=10Ω
tf
Unit
V
A
W
℃
Min Typ Max Unit
60
V
10 uA
±10 uA
1
2.5 V
1
Ω
0.65
0.4
S
220
105
pF
16
15
35
ns
380
120
■ Marking
Marking
NA
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