2SK1133-3 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
■ Features
● VDS (V) = 50V
● ID = 100 mA
● RDS(ON) ＜ 50Ω (VGS = 4V )
● Complments the 2SJ166
N-Channel MOSFET
2SK1133
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note.1)
Power Dissipation
Junction Temperature
Channel Temperature
Storage Temperature Range
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
VDS
50
V
VGS
±7
ID
100
mA
IDM
200
PD
200
mW
TJ
150
Tch
150
℃
Tstg
-55 to 150
MOSFET
Unit: mm
0.15 +0.02
-0.02
1. Gate
2. Source
3. Drain
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Cut-off Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
Test Conditions
VDSS ID=250μA, VGS=0V
IDSS VDS=50V, VGS=0V
IGSS
VDS=0V, VGS=±7V
VGS(off) VDS=5 V ID=1uA
RDS(On) VGS=4V, ID=20mA
gFS
VDS=5V, ID=20mA
Ciss
Coss VGS=0V, VDS=5V, f=1MHz
Crss
td(on)
tr
td(off)
VGS=5V, VDS=5V, ID=20mA,
RL=250Ω,RG=10Ω
tf
■ Marking
Marking
G11
Min Typ Max Unit
50
V
10 uA
±10 uA
1
2
V
50 Ω
20 40
ms
7
6
pF
2
6
25
ns
36
35
www.kexin.com.cn ¹