2SJ605 Datasheet, PDF (1/2 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

SMD Type
TransistIoCrs
MOS Field Effect Transistors
2SJ605
Features
Super low on-state resistance:
RDS(on)1 = 20 m MAX. (VGS = -10 V, ID = -33 A)
RDS(on)2 = 31 m MAX. (VGS = -4.0 V, ID = -33 A)
Low input capacitance
Ciss = 4600 pF TYP. (VDS = -10 V, VGS = 0 A)
Built-in gate protection diode
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
+0.2
2.54-0.2
+0.1
5.08-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1¹G^ga^at^te^e
2²D^dr^ra^aiⁱnⁿ
3³S^so^ou^ur^rc^ce^e
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
-60
V
Gate to Source Voltage
VGSS
20
V
Drain Current(DC)
ID
65
A
Drain Current(pulse) *1
ID(pulse)
200
A
Total Power Dissipation
PT
1.5
W
Channel Temperature
Tch
150
Storage temperature
Tstg
-55 to +150
Single Avalanche Current *2
IAS
-45
A
Single Avalanche Energy *2
EAS
203
mJ
*1. PW 10ìs,Dduty cycle 1%.
*2.Starting Tch=25 ,RG=25Ù,VGS=-20V-0, VDD=-30V
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