2SJ605-ZJ Datasheet, PDF (1/5 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
P-Channel MOSFET
2SJ605-ZJ
MOSFET
■ Features
● VDS (V) =-60V
● ID =-65A
● RDS(ON) ＜ 20mΩ (VGS =-10V)
● RDS(ON) ＜ 31mΩ (VGS =-4V)
● Low Ciss: Ciss = 4600 pF (TYP.)
Gate
Drain
Body
Diode
Gate
Protection
Diode
Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
-60
V
VGS
±20
Continuous Drain Current
ID
-65
Pulsed Drain Current (Note.1)
IDM
-200
A
Single Avalanche Current (Note.2)
IAS
-45
Power Dissipation
Tc = 25℃
100
PD
W
Ta = 25℃
1.5
Single Avalanche Energy (Note.2)
EAS
203
mJ
Junction Temperature
Junction Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
Note.1: PW ≤ 10us,Duty Cycle ≤ 1%
Note.2: Starting TJ = 25 °C,VDD=-30V, RG = 25Ω , VGS = –20 V → 0
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