2SJ603 Datasheet, PDF (1/2 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

SMD Type
MOS Field Effect Transistor
2SJ603
MOSFET
Features
Low on-resistance
RDS(on)1 = 48 m MAX. (VGS =-10 V, ID = -13A)
RDS(on)2 = 75m MAX. (VGS = -4.0 V, ID =-13 A)
Low Ciss: Ciss = 1900 pF TYP.
Built-in gate protection diode
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s, duty cycle 1 %
Symbol
Rating
Unit
VDSS
-60
V
VGSS
20
V
ID
25
A
ID
70
A
PD
50
W
PD
1.5
W
Tch
150
Tstg
-55 to +150
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