2SJ600 Datasheet, PDF (1/2 Pages) NEC – SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

SMD Type
MOSFICET
MOS Field Effect Transistor
2SJ600
Features
Low on-resistance
RDS(on)1 = 50 m MAX. (VGS =-10 V, ID = -13 A)
RDS(on)2 = 79m MAX. (VGS = -4.0 V, ID =-13 A)
Low Ciss: Ciss = 1900 pF TYP.
Built-in gate protection diode
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s, duty cycle 1 %
Symbol
Rating
Unit
VDSS
-60
V
VGSS
20
V
ID
25
A
ID
70
A
PD
45
W
PD
1.0
W
Tch
150
Tstg
-55 to +150
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