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2SJ600-Z_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET | |||
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SMD Type
P-Channel MOSFET
2SJ600-Z
MOSFET
â Features
â VDS (V) =-60V
â ID =-25A
â RDS(ON) ï¼ 50mΩ (VGS =-10V)
â RDS(ON) ï¼ 79mΩ (VGS =-4V)
â Low Ciss: Ciss = 1900 pF (TYP.)
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
m ax
2.3
4 .60 +0.15
-0.15
0.60+ 0.1
- 0.1
1 Gate
2 Drain
3 Source
â Absolute Maximum Ratings Ta = 25â
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
-60
V
VGS
±20
Continuous Drain Current
ID
-25
Pulsed Drain Current (Note.1)
IDM
-70
A
Single Avalanche Current (Note.2)
IAS
-25
Power Dissipation
Tc = 25â
45
PD
W
Ta = 25â
1
Single Avalanche Energy (Note.2)
EAS
62.5
mJ
Junction Temperature
Junction Storage Temperature Range
TJ
150
â
Tstg
-55 to 150
Note.1: PW ⤠10us,Duty Cycle ⤠1%
Note.2: Starting TJ = 25 °C, RG = 25Ω , VGS = â20 V â 0
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