2SJ598-Z Datasheet, PDF (1/5 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
MOSFET
P-Channel MOSFET
2SJ598-Z
■ Features
● VDS (V) =-60V
● ID =-12 A
● RDS(ON) ＜ 130m Ω (VGS =-10V)
● RDS(ON) ＜ 190mΩ (VGS =-4V)
● Low Ciss: Ciss = 720 pF (TYP.)
Gate
Drain
Body
Diode
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
m ax
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Gate
2 Drain
3 Source
Gate
Protection _Source
Diode
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
-60
V
VGS
±20
Continuous Drain Current
ID
-12
Pulsed Drain Current (Note.1)
IDM
-30
A
Single Avalanche Current (Note.2)
IAS
-12
Power Dissipation
Tc = 25℃
23
PD
W
Ta = 25℃
1
Single Avalanche Energy (Note.2)
EAS
14.4
mJ
Junction Temperature
Junction Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
Note.1: PW ≤ 10 us,Duty Cycle ≤ 1%
Note.2: Starting TJ = 25 °C,VDD=-30V, RG = 25Ω , VGS = –20 V → 0
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