2SJ530S Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Hight Speed Power Switching

SMD Type
Hight Speed Power Switching
2SJ530S
MOSFICET
Features
Low on-resistance
RDS(on) = 0.08 typ.
High speed switching
4V gate drive devices.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW 10 s, duty cycle 1 %
Symbol
Rating
Unit
VDSS
-60
V
VGSS
20
V
ID
-15
A
ID
-60
A
PD
30
W
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Gate to source breakdown voltage
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Testconditons
VDSS ID=-10mA,VGS=0
VGSS IG= 100 A ,VDS=0
IDSS VDS=-60V,VGS=0
IGSS VGS= 16V,VDS=0
VGS(off) VDS=-10V,ID=-1mA
Yfs VDS=-10V,ID=-8A
VGS=-10V,ID=-8A
RDS(on)
VGS=-4.0V,ID=-8A
Ciss
Coss VDS=-10V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
VGS(on)=-10V,ID=--8A ,RL=3.75
tf
Min Typ Max Unit
-60
V
20
V
-10
A
10 A
-1.0
-2.0 V
6.5 11
S
0.08 0.10
0.11 0.16
850
pF
420
pF
110
pF
12
ns
75
ns
125
ns
75
ns
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