2SJ461_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
MOSFET
■ Features
● VDS (V) =-50V
● ID =-0.1 A
● RDS(ON) ＜ 50Ω (VGS =-4V)
● RDS(ON) ＜ 100Ω (VGS =-2.5V)
P-Channel MOSFET
2SJ461
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current （Note.1)
Power Dissipation
Junction Temperature
Junction Storage Temperature Range
Note.1: PW ≤ 10 ms, duty cycle ≤ 1%
Symbol
VDS
VGS
ID
IDM
PD
TJ
Tstg
Rating
-50
±7
-0.1
-0.2
0.2
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate to Source Cutoff Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
VDSS
IDSS
IGSS
VGS(off)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Conditions
ID=-250μA, VGS=0V
VDS=-50V, VGS=0V
VDS=0V, VGS=±7V
VGS=-3V ID=-1mA
VGS=-4V, ID=-10mA
VGS=-2.5V, ID=-3mA
VDS=-3V, ID=-10mA
VGS=0V, VDS=-3V, f=1MHz
VGS(on)=-3V, ID=-20mA,
RL=200Ω,RG=10Ω,VDD=-3V
Unit
V
A
W
℃
1. Gate
2. Source
3. Drain
Min Typ Max Unit
-50
V
-1 uA
±3 uA
-0.7
-1.3 V
50
Ω
100
12
mS
6
9
pF
1.6
32
270
ns
45
130
■ Marking
Marking
H19
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