2SJ461 Datasheet, PDF (1/1 Pages) NEC – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

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MOSFIECT
MOS Field Effect Transistor
2SJ461
Features
Can be driven by a 2.5V power source.
Not necessary to consider driving current because of its
high input impedance.
Possible to reduce the number of parts by omitting the bias resistor.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
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22.ESmoituterrce
33..cDollreactionr
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW 10 s; d 1%.
Symbol
VDSS
VGSS
ID
ID
PD
Tch
Tstg
Rating
-50
7.0
0.1
0.2
200
150
-55 to +150
Unit
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Gate to source breakdown voltage
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Testconditons
VDSS ID=-10mA,VGS=0
VGSS IG= 200 A ,VDS=0
IDSS VDS=-50V,VGS=0
IGSS VGS= 7.0V,VDS=0
VGS(off) VDS=-3.0V,ID=-1 A
Yfs VDS=-3.0V,ID=-10mA
VGS=-2.5V,ID=-3mA
RDS(on)
VGS=-4.0V,ID=-10mA
Ciss
Coss VDS=-3.0V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
VDD=-3.0V,VGS(on)=-3.0V,ID=--20mA
RL=200 ,RG=10
tf
Min Typ Max Unit
-20
V
10
V
-100 A
10 A
-0.7 -0.9 -1.3 V
12
ms
46 100
31 50
6
pF
9
pF
1.6
pF
32
ns
270
ns
45
ns
130
ns
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