2SJ360_15 Datasheet, PDF (1/5 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
P-Channel MOSFET
2SJ360
MOSFET
■ Features
● VDS (V) =-60V
● ID =-1 A
● RDS(ON) ＜ 0.73Ω (VGS =-10V)
● RDS(ON) ＜ 1.2Ω (VGS =-4V)
● High forward transfer admittance
D
G
S
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate
2.Drain
3.Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Drain−Gate voltage (RGS = 20 k Ω)
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance, Channel to Ambient
Junction Temperature
Junction Storage Temperature Range
Symbol
VDS
VDG
VGS
ID
IDM
PD
RθJA
TJ
Tstg
Rating
-60
-60
±20
-1
-4
0.5
1.5
250
150
-55 to 150
Unit
V
A
W
℃/W
℃
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