2SJ360 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

SMD Type
MOS Field Effect Transistors
2SJ360
Features
Low on-state resistance
RDS(on)=0.55 (VGS=-4V,ID=-1.0A)
High forward transfer admittance :|Yfs|=0.9S(Typ.)
Low leakage current :IDSS=-100 A Max.)(VDS=-60V)
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
12 ³
0.48+0.1
-0.1
0.53+0.1
-0.1
3.00+0.1
-0.1
MOSFET
Unit: mm
1.50^+0.1
-0.1
0.44+0.1
-0.1
1 Gate
1¹.^. S^Bo^au^serce
2 Drain
2².^. D^Cr^oa^lli^en^ctor
3³³.^. G^SEma^ot^uie^itrtcere
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
Symbol
Rating
Unit
VDSS
-60
V
VGSS
20
V
ID
-1
A
ID
-3
A
PD
0.5
W
Tch
150
Tstg
-55 to +150
* PW 10 s; d 1%.
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