2SJ356_15 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
P-Channel MOSFET
2SJ356
MOSFET
■ Features
● VDS (V) =-60V
● ID =-2 A (VGS =-10V)
● RDS(ON) ＜ 0.5Ω (VGS =-10V)
● RDS(ON) ＜ 0.95Ω (VGS =-4V)
Drain (D)
Gate (G)
Internal
diode
Gate
protection
diode
Source (S)
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current （Note.1)
Power Dissipation
Junction Temperature
Junction Storage Temperature Range
Symbol
Rating
Unit
VDS
-60
V
VGS
-20,+10
ID
-2
A
IDM
-4
PD
2
W
TJ
150
℃
Tstg
-55 to 150
Note.1: PW ≤ 10 ms, duty cycle ≤ 1%
1.Gate
2.Drain
3.Source
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