2SJ356 Datasheet, PDF (1/2 Pages) NEC – P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

SMD Type
MOS Field Effect Transistors
2SJ356
Features
Low on-state resistance
RDS(on)=0.95 (VGS=-4V,ID=-1.0A)
RDS(on)=0.50 (VGS=-10V,ID=-1.0A)
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
12 ³
0.48+0.1
-0.1
0.53+0.1
-0.1
MOSFET
Unit: mm
1.50^+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
1 Gate
1¹.^. S^Bo^au^serce
2 Drain
2².^. D^Cr^oa^lli^en^ctor
3³³.^. G^SEma^ot^uie^itrtcere
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
Symbol
Rating
Unit
VDSS
-60
V
VGSS
-20,+10
V
ID
2.0
A
ID
4
A
PD
2.0
W
Tch
150
Tstg
-55 to +150
* PW 10 s; d 1%.
www.kexin.com.cn ¹