2SJ325 Datasheet, PDF (1/2 Pages) NEC – SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

SMD Type
MOSFICET
MOS Field Effect Power Transistors
2SJ325
Features
Low on-state resistance
RDS(on)=83m (VGS=-10V,ID=-2A)
RDS(on)=0.15 (VGS=-4V,ID=-1.6A)
Built-in G-S Gate Protection Diode
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage (DC)
Gate to source voltage (AC)
Drain current (DC)
Drain current(pulse) *
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
Symbol
Rating
Unit
VDSS
-30
V
VGSS
-20,+10
V
VGSS
20
V
ID
4.0
A
ID
16
A
20
W
PD
1.0
W
Tch
150
Tstg
-55 to +150
* PW 10 s; d 1%.
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