2SJ302 Datasheet, PDF (1/1 Pages) NEC – SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

SMD Type
MOSFET
Mos Field Effect Power Transistor
2SJ302
Features
Low on-state resistance
RDS(on) 0.1 (VGS=-10V,ID=-8A)
RDS(on) 0.24 (VGS=-4V,ID=-6A)
Low Ciss Ciss=1200PF TYP.
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW 10 s; d 1%.
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut-off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Reverse Recovery Time
Reverse Recvery Charge
Diode Forward Voltage
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
Symbol
Rating
Unit
VDSS
-60
V
VGSS
-20,+10
V
ID
16
A
ID
64
A
PD
75
W
Tch
150
Tstg
-55 to +150
1 Gate
2 Drain
3 Source
Symbol
Testconditons
IDSS VDS=-60V,VGS=0
IGSS VGS= 16V,VDS=0
VGS(off) VDS=-10V,ID=-1mA
Yfs VDS=-10V,ID=-8A
VGS=-10V,ID=-8A
RDS(on)
VGS=-4V,ID=-6A
Ciss
Coss VDS=-10V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
VGS(on)=-10V,VDD=-30V,ID=--8A
RL=3.75 ,RG=10
tf
QG VGS=-10V,ID=-8A
QGS ID=-16V
QGD VDD=-48V
trr
IF=-16A,VGS=0,di/dt=50A/ s
Qrr
VSD IF=-16A,VGS=0
Min Typ Max Unit
-10
A
10 A
-1.0
-2.0 V
5.0
s
75 100 m
130 240 m
1200
pF
670
pF
290
pF
30
ns
170
ns
150
ns
130
ns
42
nc
3
nc
17
nc
110
ns
220
nc
1
V
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