2SJ288_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
P-Channel MOSFET
2SJ288
MOSFET
■ Features
● VDS (V) =-60V
● ID =-0.5 A
● RDS(ON) ＜ 3Ω (VGS =-10V)
● RDS(ON) ＜ 4Ω (VGS =-4V)
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate
2.Drain
3.Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
-60
V
VGS
±15
Continuous Drain Current
Pulsed Drain Current (Note.1)
ID
-0.5
A
IDM
-2
Power Dissipation
Tc = 25℃
PD
3.5
W
1.3
Junction Temperature
Junction Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
Note.1: PW ≤ 10 us, duty cycle ≤ 1%
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate to Source Cutoff Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Diode Forward Voltage
Symbol
VDSS
IDSS
IGSS
VGS(off)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Test Conditions
ID=-1mA, VGS=0V
VDS=-60V, VGS=0V
VDS=0V, VGS=±12V
VGS=-10V ID=-1mA
VGS=-10V, ID=-250mA
VGS=-4V, ID=-250mA
VDS=-10V, ID=-250mA
VGS=0V, VDS=-20V, f=1MHz
See Speaified Test circuit
IS=-0.5A,VGS=0V
Min Typ Max Unit
-60
V
-100 uA
±10 uA
-1
-2
V
3
Ω
4
240 400
mS
45
20
pF
5
7
10
ns
35
20
-1
V
■ Marking
Marking
JE
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