2SJ287_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
P-Channel MOSFET
2SJ287
MOSFET
1.70 0.1
■ Features
● VDS (V) =-30V
● ID =-500m A
● RDS(ON) ＜ 2.2Ω (VGS =-10V)
● RDS(ON) ＜ 3.3Ω (VGS =-4V)
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note.1)
Power Dissipation
Tc = 25Â¥
Junction Temperature
Junction Storage Temperature Range
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
VDSS
IDSS
IGSS
Gate Cut off Voltage
VGS(off)
Static Drain-Source On-Resistance
RDS(On)
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Symbol
VDS
VGS
ID
IDM
PD
TJ
Tstg
Rating
-30
±15
-0.5
-2
3.5
1.3
150
-55 to 150
Test Conditions
ID=-1mA , VGS=0V
VDS=-30V, VGS=0V
VDS=0V, VGS=±12V
VDS=-10V,ID=-1mA
VGS=-10V, ID=-250mA
VGS=-4V, ID=-250mA
VDS=-10V, ID=-250mA
VGS=0V, VDS=-10V, f=1MHz
1.Gate
2.Drain
3.Source
Unit
V
A
W
℃
Min Typ Max Unit
-30
V
-100 uA
±10 uA
-1
-2
V
2.2
Ω
3.3
240 400
mS
50
35
pF
10
Turn-On DelayTime
td(on)
7
Turn-On Rise Time
Turn-Off DelayTime
tr
td(off)
10
ns
35
Turn-Off Fall Time
Diode Forward Voltage
tf
VSD
IS=-0.5A,VGS=0V
20
-1
V
■ Marking
Marking
JD
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