2SJ287 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – Very High-Speed Switching Applications

SMD Type
Features
Low on resistance
Very high-speed switching
Low-voltage drive
P-Channel MOS Silicon FET
2SJ287
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
12 ³
0.48+0.1
-0.1
0.53+0.1
-0.1
MOSFET
Unit: mm
1.50^+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage VGS=0
Gate to source voltage VDS=0
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW 10 s; d 1%.
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut-off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Marking
Marking
JD
Symbol
Rating
Unit
VDSS
-30
V
VGSS
15
V
ID
-500
mA
ID
-2
A
PD
3.5
W
Tch
150
Tstg
-55 to +150
Symbol
Testconditons
IDSS VDS=-30V,VGS=0
IGSS VGS= 12V,VDS=0
VGS(off) VDS=-10V,ID=-1mA
Yfs VDS=-10V,ID=-250mA
VGS=-10V,ID=-250mA
RDS(on)
VGS=-4V,ID=-250mA
Ciss
Coss VDS=-10V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
VDD=-15V,ID=--250mA RL=60
tf
1 Gate
1¹.^. S^Bo^au^serce
2 Drain
2².^. D^Cr^oa^lli^en^ctor
3³³.^. G^SEma^ot^uie^itrtcere
Min Typ Max Unit
-100
A
10 A
-1.0
-2.0 V
240 400
ms
1.5 2.2
2.2 3.3
50
pF
35
pF
10
pF
7
ns
10
ns
35
ns
20
ns
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