2SJ244_15 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
P-Channel MOSFET
2SJ244
MOSFET
■ Features
● VDS (V) =-12V
● ID =-2 A
D
● RDS(ON) ＜ 0.8Ω (VGS =-4V)
G
● RDS(ON) ＜ 0.9Ω (VGS =-2.5V)
S
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate
2.Drain
3.Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note.1)
Power Dissipation
Junction Temperature
Junction Storage Temperature Range
Symbol
Rating
Unit
VDS
-12
V
VGS
±7
ID
-2
A
IDM
-4
PD
1
W
TJ
150
℃
Tstg
-55 to 150
Note.1: PW ≤ 10 us, duty cycle ≤ 10%
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate to Source Cutoff Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-Off DelayTime
Diode Forward Voltage
Symbol
VDSS
VGSS
IDSS
IGSS
VGS(off)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
td(off)
VSD
Test Conditions
ID= -1m A, VGS=0V
IG=±10μA, VDS=0V
VDS=-8V, VGS=0V
VDS=0V, VGS=±6V
VGS=-5V ID=-100uA
VGS=-4V, ID=-1 A
VGS=-2.5V, ID=-0.5A
VDS=-5V, ID=-1A
VGS=0V, VDS=-5V, f=1MHz
VGS(on)=-4V, ID=-0.2A, RL=51Ω
IS=-4A,VGS=0V
Min Typ Max Unit
-12
V
±7
-1 uA
±5 uA
-0.4
-1.4 V
0.8
Ω
0.9
1.8
S
130
50
pF
260
365
ns
1450
-7
V
■ Marking
Marking
JY
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