2SJ213_15 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
P-Channel MOSFET
2SJ213
MOSFET
■ Features
● VDS (V) =-100V
● ID =-0.5 A
● RDS(ON) ＜ 4.2Ω (VGS =-10V)
● RDS(ON) ＜ 5Ω (VGS =-4V)
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate
2.Drain
3.Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note.1)
Power Dissipation
Junction Temperature
Junction Storage Temperature Range
Note.1: PW ≤ 10 ms, duty cycle ≤ 50%
■ Electrical Characteristics Ta = 25℃
Symbol
VDS
VGS
ID
IDM
PD
TJ
Tstg
Rating
-100
±20
-0.5
-1
2
150
-55 to 150
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate to Source Cutoff Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
VDSS
IDSS
IGSS
VGS(off)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Conditions
ID=-250μA, VGS=0V
VDS=-100V, VGS=0V
VDS=0V, VGS=±20V
VGS=-10V ID=-1mA
VGS=-10V, ID=-0.3A
VGS=-4V, ID=-0.3A
VDS=-5V, ID=-0.3A
VGS=0V, VDS=-10V, f=1MHz
VGS(on)=-4V, ID=-0.3A,
RL=1.5Ω,RG=10 Ω,VDD=-5V,
Unit
V
A
W
℃
Min Typ Max Unit
-100
V
-10 uA
±10 uA
-1
-3
V
4.2
Ω
5
0.4 0.5
S
165
75
pF
13
110
320
ns
100
130
■ Marking
Marking
PP
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