2SJ212_15 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
P-Channel MOSFET
2SJ212
MOSFET
■ Features
● VDS (V) =-60V
● ID =-500m A
● RDS(ON) ＜ 3Ω (VGS =-10V)
● RDS(ON) ＜ 4Ω (VGS =-4V)
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate
2.Drain
3.Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note.1)
Power Dissipation
Junction Temperature
Junction Storage Temperature Range
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
Symbol
VDS
VGS
ID
IDM
PD
TJ
Tstg
Rating
-60
±20
-0.5
-1
2
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Cut off Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
VDSS
IDSS
IGSS
VGS(off)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Conditions
ID=-250μA, VGS=0V
VDS=-60V, VGS=0V
VDS=0V, VGS=±20V
VDS=-10V,ID=-1mA
VGS=-4V, ID=-0.3A
VGS=-10V, ID=-0.5 A
VDS=-5V, ID=-0.5A
VGS=0V, VDS=-5V, f=1MHz
VGS(on)=-4V, VDS=-5V, ID=-0.3A,
RL=1.5Ω,RGEN=10Ω
Unit
V
A
W
℃
Min Typ Max Unit
-60
V
-10 uA
±10 uA
-1
-3
V
4
Ω
3
0.4 0.54
S
160
100
pF
25
130
380
ns
95
140
■ Marking
Marking
PO
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