2SJ212 Datasheet, PDF (1/1 Pages) NEC – P-CHANNEL MOS FET FOR SWITCHING

SMD Type
MOS Fied Effect Transistor
2SJ212
Features
Directly driven by Ics having a 5V poer supply.
Has low on-state resistance
RDS(on)=4.0 MAX.@VGS=-4.0V,ID=-0.3A
RDS(on)=3.0 MAX.@VGS=-1.0V,ID=-0.5A
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
12 ³
0.48+0.1
-0.1
0.53+0.1
-0.1
MOSFET
Unit: mm
1.50^+0.1
-0.1
0.44+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage VGS=0
Gate to source voltage VDS=0
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW 10 ms; d 50%.
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut-off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Marking
Marking
PD
3.00+0.1
-0.1
Symbol
Rating
Unit
VDSS
-60
V
VGSS
20
V
ID
500
mA
ID
1.0
A
PD
2.0
W
Tch
150
Tstg
-55 to +150
1 Gate
1¹.^. S^Bo^au^serce
2 Drain
2².^. D^Cr^oa^lli^en^ctor
3³³.^. G^SEma^ot^uie^itrtcere
Symbol
Testconditons
IDSS VDS=-60V,VGS=0
IGSS VGS= 20V,VDS=0
VGS(off) VDS=-10V,ID=-1mA
Yfs VDS=-5.0V,ID=-0.3A
VGS=-4.0V,ID=-0.3A
RDS(on)
VGS=-10V,ID=-0.5A
Ciss
Coss VDS=-5.0V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
VGS(on)=-4V,RG=10 ,VDD=-5V,ID=--
0.3A RL=1.5
tf
Min Typ Max Unit
-10
A
10 A
-1.0 -2.2 -3.0 V
0.4 0.54
s
1.5 4.0
0.8 3.0
160
pF
100
pF
25
pF
130
ns
380
ns
95
ns
140
ns
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