2SJ211 Datasheet, PDF (1/1 Pages) NEC – P-CHANNEL MOS FET FOR SWITCHING

SMD Type
MOSFET
MOS Fied Effect Transistor
2SJ211
Features
Directly driven by Ics having a 5V poer supply.
Not necessary to consider driving current because of
its high input impedance.
Possible to reduce the number of parts by omitting the biasresistor.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.B₁a_Gse_ATE
2.₂Em_Si_Otte_Ur_RCE
3.3coDlleRctAorIN
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage VGS=0
Gate to source voltage VDS=0
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW 10 ms; d 50%.
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut-off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
VDSS
VGSS
ID
ID
PD
Tch
Tstg
Rating
-100
20
200
400
200
150
-55 to +150
Unit
V
V
mA
mA
mW
Symbol
Testconditons
IDSS VDS=-100V,VGS=0
IGSS VGS= 20V,VDS=0
VGS(off) VDS=-5.0V,ID=-1 A
Yfs VDS=-5.0V,ID=-10mA
VGS=-4.0V,ID=-10mA
RDS(on)
VGS=-10V,ID=-10mA
Ciss
Coss VDS=-5.0V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
VGS(on)=-4V,RG=10 ,VDD=-5V,ID=-
10mA RL=500
tf
Min Typ Max Unit
-10
A
10 A
-1.4 -1.8 -2.4 V
20 45
ms
15 30
11 20
27
pF
16
pF
2
pF
110
ns
150
ns
160
ns
150
ns
Marking
Marking
H18
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