2SJ211-3 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
■ Features
● VDS (V) =-100V
● ID =-0.2 A
● RDS(ON) ＜ 20Ω (VGS =-10V)
● RDS(ON) ＜ 30Ω (VGS =-4V)
P-Channel MOSFET
2SJ211
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
MOSFET
Unit: mm
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
0.15 +0.02
-0.02
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
-100
V
VGS
±20
Continuous Drain Current
Pulsed Drain Current (Note.1)
ID
-0.2
A
IDM
-0.4
Power Dissipation
PD
0.2
W
Junction Temperature
Junction Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
Note.1: PW ≤ 10 ms, duty cycle ≤ 50%
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate to Source Cutoff Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
VDSS
IDSS
IGSS
VGS(off)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Conditions
ID=-250μA, VGS=0V
VDS=-100V, VGS=0V
VDS=0V, VGS=±20V
VGS=-5V ID=-1mA
VGS=-10V, ID=-10mA
VGS=-4V, ID=-10mA
VDS=-5V, ID=-10mA
VGS=0V, VDS=-5V, f=1MHz
VGS(on)=-4V, ID=-10mA,
RL=500Ω,RG=10 Ω,VDD=-5V,
Min Typ Max Unit
-100
V
-1 uA
±10 uA
-1.4
-2.4 V
20
Ω
30
20 45
mS
27
16
pF
2
110
150
ns
160
150
■ Marking
Marking
H18
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