2SJ210_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
■ Features
● VDS (V) =-60V
● ID =-200m A
● RDS(ON) ＜ 10Ω (VGS =-10V)
● RDS(ON) ＜ 15Ω (VGS =-4V)
P-Channel MOSFET
2SJ210
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
MOSFET
Unit: mm
0.1 +0.05
-0.01
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
-60
V
VGS
±20
Continuous Drain Current
Pulsed Drain Current (Note.1)
ID
-200
mA
IDM
-400
Power Dissipation
PD
200
mW
Junction Temperature
Junction Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body leakage current
IGSS
Gate Cut off Voltage
VGS(off)
Static Drain-Source On-Resistance
RDS(On)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Conditions
ID=-250μA, VGS=0V
VDS=-60V, VGS=0V
VDS=0V, VGS=±20V
VDS=-5V,ID=-1uA
VGS=-4V, ID=-10mA
VGS=-10V, ID=-10mA
VDS=-5V, ID=-10mA
VGS=0V, VDS=-5V, f=1MHz
VGS(on)=-4V, VDS=-5V, ID=-10mA,
RL=500Ω,RGEN=10Ω
Min Typ Max Unit
-60
V
-1 uA
±1 uA
-1.4
-2.4 V
15
Ω
10
20 45
mS
27
21
pF
3
120
190
ns
150
180
■ Marking
Marking
H16
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