2SJ209 Datasheet, PDF (1/3 Pages) NEC – P-CHANNEL MOS FET FOR SWITCHING

SMD Type
■ Features
● VDS (V) =-100V
● ID =-0.1 A
● RDS(ON) ＜ 60Ω (VGS =-10V)
● RDS(ON) ＜ 100Ω (VGS =-4V)
P-Channel MOSFET
2SJ209
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
MOSFET
Unit: mm
0.1 +0.05
-0.01
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note.1)
Power Dissipation
Junction Temperature
Junction Storage Temperature Range
Symbol
Rating
Unit
VDS
-100
V
VGS
±16
ID
-0.1
A
IDM
-0.2
PD
0.2
W
TJ
150
℃
Tstg
-55 to 150
Note.1: PW ≤ 10 ms, duty cycle ≤ 50%
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate to Source Cutoff Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
VDSS
IDSS
IGSS
VGS(off)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Conditions
ID=-250μA, VGS=0V
VDS=-100V, VGS=0V
VDS=0V, VGS=±16V
VGS=-5V ID=-1mA
VGS=-10V, ID=-10mA
VGS=-4V, ID=-10mA
VDS=-5V, ID=-10m A
VGS=0V, VDS=-5V, f=1MHz
VGS(on)=-4V, ID=-10mA,
RL=500Ω,RG=10 Ω,VDD=-5V,
Min Typ Max Unit
-100
V
-1 uA
±10 uA
-1.5
-2.5 V
60
Ω
100
15 22
mS
17
9
pF
1
45
75
ns
25
80
■ Marking
Marking
H17
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