2SJ208 Datasheet, PDF (1/1 Pages) NEC – P-CHANNEL MOS FET FOR SWITCHING

SMD Type
MOSFET
MOS Fied Effect Transistor
2SJ208
Features
Directly driven by Ics having a 3V poer supply.
Has low on-state resistance
RDS(on)=3.0 MAX.@VGS=-2.5V,ID=-30mA
RDS(on)=1.0 MAX.@VGS=-4.0V,ID=-1.0A
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.B₁a_Gse_ATE
2.₂Em_Si_Otte_Ur_RCE
3.3coDlleRctAorIN
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage VGS=0
Gate to source voltage VDS=0
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW 10 ms; d 50%.
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut-off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Rating
Unit
VDSS
-16
V
VGSS
16
V
ID
2.0
A
ID
4.0
A
PD
2.0
W
Tch
150
Tstg
-55 to +150
Symbol
Testconditons
IDSS VDS=-16V,VGS=0
IGSS VGS= 16V,VDS=0
VGS(off) VDS=-5.0V,ID=-1mA
Yfs VDS=-3.0V,ID=-1.0A
VGS=-2.5V,ID=-30mA
RDS(on)
VGS=-4V,ID=-1.0A
Ciss
Coss VDS=-3.0V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
VGS(on)=-3V,RG=10 ,VDD=-10V,ID=-
0.1A RL=20
tf
Min Typ Max Unit
-10
A
5
A
-1.4 -1.9 -2.4 V
0.4 1.6
s
1.6 3.0
0.7 1.0
230
pF
210
pF
35
pF
175
ns
540
ns
200
ns
230
ns
Marking
Marking
PF
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