2SJ206 Datasheet, PDF (1/1 Pages) NEC – P-CHANNEL MOS FET FOR SWITCHING

SMD Type
MOSFET
MOS Fied Effect Transistor
2SJ206
Features
Directly driven by Ics having a 5V poer supply.
Has low on-state resistance
RDS(on)=4 MAX.@VGS=-4.0V,ID=-0.3A
RDS(on)=3 MAX.@VGS=-10V,ID=-0.3A
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage VGS=0
Gate to source voltage VDS=0
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW 10 ms; d 50%.
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut-off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Rating
Unit
VDSS
-30
V
VGSS
20
V
ID
500
mA
ID
1.0
A
PD
2.0
W
Tch
150
Tstg
-55 to +150
1.B₁a_Gse_ATE
2.₂Em_Si_Otte_Ur_RCE
3.3coDlleRctAorIN
Symbol
Testconditons
Min Typ Max Unit
IDSS VDS=-30V,VGS=0
-10
A
IGSS VGS= 16V,VDS=0
5
A
VGS(off) VDS=-5.0V,ID=-1mA
-1.0 -2.3 -3.0 V
Yfs VDS=-5.0V,ID=-0.3A
0.4
s
VGS=-4.0V,ID=-0.3A
RDS(on)
VGS=-4V,ID=-0.3A
2.0 4.0
0.8 3.0
Ciss
100
pF
Coss VDS=-5V,VGS=0,f=1MHZ
80
pF
Crss
15
pF
td(on)
120
ns
tr
VGS(on)=-4V,RG=10 ,VDD=-5V,ID=-0.3A
420
ns
td(off) ^RL=17
75
ns
tf
140
ns
Marking
Marking
PH
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