2SJ205 Datasheet, PDF (1/1 Pages) NEC – P-CHANNEL MOS FET FOR SWITCHING

SMD Type
MOSFET
MOS Fied Effect Transistor
2SJ205
Features
Directly driven by Ics having a 3V poer supply.
Has low on-state resistance
RDS(on)=5 MAX.@VGS=-2.5V,ID=-10mA
RDS(on)=3 MAX.@VGS=-4V,ID=-300mA
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage VGS=0
Gate to source voltage VDS=0
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
Symbol
Rating
Unit
VDSS
-16
V
VGSS
16
V
ID
500
mA
ID
1.0
A
PD
2.0
W
Tch
150
Tstg
-55 to +150
* PW 10 ms; d 50%.
Unit: mm
0.1+0.05
-0.01
1.B₁a_Gse_ATE
2.₂Em_Si_Otte_Ur_RCE
3.3coDlleRctAorIN
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut-off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Testconditons
Min Typ Max Unit
IDSS VDS=-16V,VGS=0
-10
A
IGSS VGS= 16V,VDS=0
5
A
VGS(off) VDS=-5.0V,ID=-10 A
-1.4 -1.9 -2.4 V
Yfs VDS=-3.0V,ID=-0.3A
0.4 0.5
s
VGS=-2.5V,ID=-10mA
RDS(on)
VGS=-4V,ID=-0.3A
3.0 5.0
1.5 3.0
Ciss
105
pF
Coss VDS=-3.0V,VGS=0,f=1MHZ
90
pF
Crss
15
pF
td(on)
185
ns
tr _{VGS(on)=-3V,RG=10 ,VDD=-3V,ID=-0.3A}
900
ns
td(off) ^RL=10
40
ns
tf
135
ns
Marking
Marking
PD
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